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Thermoelectric properties of P-type Sb2Te3 thick film processed by a screen-printing technique and a subsequent annealing processSUN JIN KIM; JU HYUNG WE; JIN SANG KIM et al.Journal of alloys and compounds. 2014, Vol 582, pp 177-180, issn 0925-8388, 4 p.Article

Performance improvement of Sb2Te3 phase change material by Al dopingCHENG PENG; LIANGCAI WU; JUNHAO CHU et al.Applied surface science. 2011, Vol 257, Num 24, pp 10667-10670, issn 0169-4332, 4 p.Article

Electrical properties of antimony telluride crystals doped with selenium and bismuthIVANOVA, L. D; GRANATKINA, Yu. V; SIDOROV, Yu. A et al.Inorganic materials. 1999, Vol 35, Num 1, pp 34-41, issn 0020-1685Article

Experimental and theoretical study of silicon-doped Sb2Te3 thin films: Structure and phase stabilityXUELAI LI; FENG RAO; ZHITANG SONG et al.Applied surface science. 2011, Vol 257, Num 10, pp 4566-4568, issn 0169-4332, 3 p.Article

Influence of Nitrogen Doping upon the Phase Change Characteristics and Optical Band Gap of Sb2Te3 Thin FilmsCHANGZHOU WANG; JIWEI ZHAI; XI YAO et al.Ferroelectrics (Print). 2011, Vol 410, pp 152-158, issn 0015-0193, 7 p.Conference Paper

Phase change memory cell based on Sb2Te3/TiN/Ge2Sb2Te5 sandwich-structureFENG RAO; ZHITANG SONG; LIANGCAI WU et al.Solid-state electronics. 2009, Vol 53, Num 3, pp 276-278, issn 0038-1101, 3 p.Article

Enhanced thermoelectric properties of thermal treated Sb2Te3 thin filmsHONG, Ji-Eun; LEE, Sang-Kwon; YOON, Soon-Gil et al.Journal of alloys and compounds. 2014, Vol 583, pp 111-115, issn 0925-8388, 5 p.Article

Crystallization behavior and thermoelectric characteristics of the electrodeposited Sb2Te3 thin filmsKIM, Min-Young; OH, Tae-Sung.Thin solid films. 2010, Vol 518, Num 22, pp 6550-6553, issn 0040-6090, 4 p.Article

Estimation of incubation time for Sb2Te3 used in optical memoriesNAGPAL, S; PATHAK, P; MONA et al.SPIE proceedings series. 1998, pp 1218-1220, isbn 0-8194-2756-X, 2VolConference Paper

Evaluation of the Structure and Transport Properties of Nanostructured Antimony Telluride (Sb2Te3)SALEEMI, M; RUDITSKIY, A; TOPRAK, M. S et al.Journal of electronic materials. 2014, Vol 43, Num 6, pp 1927-1932, issn 0361-5235, 6 p.Conference Paper

Sb2Te3 nanoplates: Preparation, reaction mechanism and electrochemical propertyYANG, Jun-Song; ZUO, Peng-Fei; ZHANG, Sheng-Yi et al.Journal of alloys and compounds. 2013, Vol 565, pp 73-78, issn 0925-8388, 6 p.Article

Thermoelectric properties of Bi2Te3-Sb2Te3 single crystals in the range 100-700 KIVANOVA, L. D; GRANATKINA, Yu. V.Inorganic materials. 2000, Vol 36, Num 7, pp 672-677, issn 0020-1685Article

Optical constants of Bi2Te3 and Sb2Te3 measured using spectroscopic ellipsometryHAO CUI; BHAT, I. B; VENKATASUBRAMANIAN, R et al.Journal of electronic materials. 1999, Vol 28, Num 10, pp 1111-1114, issn 0361-5235Article

THE NATURE OF SILVER IMPURITY ATOMS IN ANTIMONY TELLURIDE = DIE NATUR DER SILBER-FREMDATOME IN ANTIMONTELLURID = NATURE DES ATOMES ETRANGERS D'ARGENT DANS LE TELLURURE D'ANTIMOINEHORAK J; LOSTAK P; SISKA L et al.1982; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1982-11; VOL. 114; NO 1; PP. 39-45; BIBL. 20 REF.Article

An X-ray study of the mixed-layered compounds of (GeTe)n(Sb2Te3)m homologous seriesKARPINSKY, O. G; SHELIMOVA, L. E; KRETOVA, M. A et al.Journal of alloys and compounds. 1998, Vol 268, pp 112-117, issn 0925-8388Article

Surface Reconstruction-Induced Coincidence Lattice Formation Between Two-Dimensionally Bonded Materials and a Three-Dimensionally Bonded SubstrateBOSCHKER, Jos E; MOMAND, Jamo; BRAGAGLIA, Valeria et al.Nano letters (Print). 2014, Vol 14, Num 6, pp 3534-3538, issn 1530-6984, 5 p.Article

Vibrational properties of crystalline Sb2Te3 from first principlesSOSSO, G. C; CARAVATI, S; BERNASCONI, M et al.Journal of physics. Condensed matter (Print). 2009, Vol 21, Num 9, issn 0953-8984, 095410.1-095410.6Article

Heat-treatment effect on the structural and optical properties of flash evaporated Sb2Te3 thin filmsSOLIMAN, H. S; YAGHMOUR, S; AL-SOLAMI, H. G et al.EPJ. Applied physics (Print). 2008, Vol 44, Num 1, pp 59-64, issn 1286-0042, 6 p.Article

Doping properties of Pb and Ge in Bi2Te3 and Sb2Te3 = Dotierungseigenschaften von Pb und Ge in Bi2Te3 und Sb2Te3SUESSMANN, H; PRIEMUTH, A; PROEHL, U et al.Physica status solidi. A. Applied research. 1984, Vol 82, Num 2, pp 561-567, issn 0031-8965Article

TERNAERE CHALKOGENHALTIGE SYSTEME IX. DAS SYSTEM INDIUM-ANTIMON-TELLUR = TERNARY CHALCOGEN SYSTEMS IX. THE SYSTEM INDIUM-ANTIMONY-TELLURIUMLEGENDRE B; GATHER B; BLACHNIK R et al.1980; Z. METALLKD.; DEU; DA. 1980-09; VOL. 71; NO 9; PP. 588-592; BIBL. 10 REF.Article

Electrical and thermoelectrical properties of Sb2Te3 prepared by the metal-organic chemical vapor deposition techniqueGIANI, A; BOULOUZ, A; PASCAL-DELANNOY, F et al.Journal of materials science letters. 1999, Vol 18, Num 7, pp 541-543, issn 0261-8028Article

Signatures of charge inhomogeneities in the infrared spectra of topological insulators Bi2Se3, Bi2Te3 and Sb2Te3DORDEVIC, S. V; WOLF, M. S; STOJILOVIC, N et al.Journal of physics. Condensed matter (Print). 2013, Vol 25, Num 7, issn 0953-8984, 075501.1-075501.5Article

Preparation and Characterization of Bi2Te3/Sb2Te3 Thermoelectric Thin-Film Devices for Power GenerationKIM, Min-Young; OH, Tae-Sung.Journal of electronic materials. 2014, Vol 43, Num 6, pp 1933-1939, issn 0361-5235, 7 p.Conference Paper

Effects of annealing on thermoelectric properties of Sb2Te3 thin films prepared by radio frequency magnetron sputteringBO FANG; ZHIGANG ZENG; XIAOXIA YAN et al.Journal of materials science. Materials in electronics. 2013, Vol 24, Num 4, pp 1105-1111, issn 0957-4522, 7 p.Article

Lithographically Patterned p-Type SbxTey Nanoribbons with Controlled Morphologies and DimensionsHYUNSUNG JUNG; LIM, Jae-Hong; HOSIK PARK et al.Journal of physical chemistry. C. 2013, Vol 117, Num 33, pp 17303-17308, issn 1932-7447, 6 p.Article

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